Scientific articles with LiteScope measurements

A new study in Nanoscale introduces electron-beam excited AFM (EB-AFM) — a way to run electrical AFM without a physical back-contact. A low-energy electron beam near the AFM probe acts as a remote electrode, removing the destructive sample preparation that conventional conductive AFM requires.

A study presented at ISTFA 2025 by NVIDIA and NenoVision introduces a streamlined approach to semiconductor failure analysis. The work integrates in-situ conductive AFM (CAFM) with plasma FIB in a single SEM platform, making it possible to localize electrical defects that conventional SEM imaging can miss.

A recent study published in the Journal of Materials Science investigates the microstructural evolution and creep behavior of recrystallized FeCr-based alloys. The work combines multiple correlative microscopy techniques to provide a comprehensive view of grain structure, crystallite size, and surface topography.

A new study has succesfully demonstrated Electron-Beam-Excited Conductive AFM (EBC-AFM) on semiconductive 2D materials – an approach that removes the need for back-contact and time consuming sample manipulation required with traditional conductive AFM. Instead, the SEM’s electron beam generates charge carriers that close the circuit with the AFM tip, making it possible to carry out fast, non-destructive electrical mapping of 2D materials, including full wafers.

The study investigates oxide nanoparticles (ONPs), specifically ZrO2 nanoparticles in Fe20Cr alloys, produced via laser powder bed fusion (PBF-LB/M), in order to understand how these nanoparticles impact the microstructure and mechanical properties. LiteScope was used for validating Electron Channeling Contrast Imaging (ECCI) findings and to distinguish nanoparticles (ONPs) from pores or preparation artifacts.

Researchers have developed a low-temperature plasma process to coat self-sensing AFM probes with boron-doped nanocrystalline diamond, boosting durability and sensitivity. This breakthrough enables precise electrical mapping of micro- and nanostructures in air and vacuum, advancing semiconductor technology.