Advancements in graphene nanopatterning using focused electron-beam-induced etching

Graphene, adored for its remarkable mechanical and electronic attributes, has long captivated researchers seeking to harness its potential for various applications. Yet, precise manipulation of single graphene layers remains a formidable challenge, prompting exploration into innovative fabrication techniques.

To unravel the intricate interplay between electron-beam exposure, water presence, and SiO2 substrate morphology, in-situ experiments were conducted using an AFM LiteScope microscope installed within a SEM chamber. This setup facilitated direct measurement of SiO2 substrate profiles following electron-beam exposure, providing insights into the underlying mechanisms at play.

Lines were patterned directly onto the SiO2 substrate using varying dwell time values and the highest electron dose. Analysis of AFM data revealed distinct morphological changes in the SiO2 substrate, corroborating the influence of electron-beam parameters on substrate morphology. Notably, the absence of a middle protrusion in the AFM profiles highlights the nuanced effects of electron-beam exposure on SiO2 substrate topography.

These findings done by AFM-in-SEM LiteScope not only shed light on the intricate dynamics governing graphene nanopatterning but also deepen our understanding of the underlying mechanisms driving morphological changes in SiO2 substrates under electron-beam irradiation. Such insights pave the way for enhanced control and optimization of nanopatterning processes, facilitating the development of graphene-based devices with unprecedented precision and functionality.

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