Workshop at Arizona State University

Md Jayed Hossain, Arizona State University, School of Electrical, Computer, and Energy Engineering, Tempe, AZ, 85281

Transition metal dichalcogenides (TMDs) are promising candidates for future semiconductor technologies, but their integration requires precise control over defects during growth, transfer, and device fabrication. Conductive AFM (C-AFM) is a powerful tool for nanoscale electrical characterization, yet manual interpretation is time-consuming and prone to inconsistency. We introduce a computer vision–assisted workflow that automates C-AFM data analysis, enabling rapid and objective quantification of key parameters such as defect coverage, defect density, and grain boundary length. Validated against hand-labeled datasets, the approach ensures consistency and scalability, providing a robust pathway toward standardized defect metrology and quality control in 2D semiconductors.

A novel electron-beam assisted conductive atomic force microscopy (EBC‑AFM) technique enables back-contact free electrical measurements of 2D material samples. By leveraging electron-beam excitation, the method can probe electrical properties in-line and at full wafer scale, eliminating the need for traditional metal back contacts. This approach promises high spatial resolution and throughput, making it suitable for process monitoring in industrial fabrication environments. Moreover, its compatibility with wafer-scale and in-line workflows could significantly enhance quality control and characterization speed for emerging 2D electronic devices. Overall, EBC‑AFM offers a scalable, non-destructive way to map electrical behavior in 2D materials with precision and efficiency.