We are pioneers of in-situ multimodal correlative imaging
The correlation of images from two microscopes can be limited by the difficult localization of the region of interest or incompatibility of data acquired by different instruments under different conditions. To achieve the best results possible, you need to obtain and variety of AFM modalities (AFM, C-AFM, KPFM, MFM) and SEM images (SE, BSE, EBIC, EDX) at the same time, under the same conditions and in a user-friendly way.
This can be achieved by unique CPEM (Correlative Probe and Electorn Microscopy) technology, developed by NenoVision. It represents a combination of complementary AFM and SEM that enables you to use the advantages of both these techniques via LiteScope AFM-in-SEM.
Want more info? Feel free to...
LiteScope Featured in a Breakthrough Study on Electron-Beam-Excited Conductive AFM
A new study has succesfully demonstrated Electron-Beam-Excited Conductive AFM (EBC-AFM) on semiconductive 2D materials – an approach that removes the need for back-contact and time consuming sample manipulation required with traditional conductive AFM. Instead, the SEM’s electron beam generates charge carriers that close the circuit with the AFM tip, making it possible to carry out fast, non-destructive electrical mapping of 2D materials, including full wafers.
ZrO2 Nanoparticles in Fe20Cr Oxide Dispersion-Strengthened Alloys Processed by Laser Powder Bed Fusion
The study investigates oxide nanoparticles (ONPs), specifically ZrO2 nanoparticles in Fe20Cr alloys, produced via laser powder bed fusion (PBF-LB/M), in order to understand how these nanoparticles impact the microstructure and mechanical properties. LiteScope was used for validating Electron Channeling Contrast Imaging (ECCI) findings and to distinguish nanoparticles (ONPs) from pores or preparation artifacts.
AFM-in-SEM LiteScope on the Cover of a Key Study on Diamond-Coated Probes
Researchers have developed a low-temperature plasma process to coat self-sensing AFM probes with boron-doped nanocrystalline diamond, boosting durability and sensitivity. This breakthrough enables precise electrical mapping of micro- and nanostructures in air and vacuum, advancing semiconductor technology.